SINGLE SURFACE POLISHING METHOD

The present invention is a single surface polishing method using a polishing pad to polish a wafer surface, the single surface polishing method being characterized by comprising: monitoring a change in the polishing pad temperature; polishing the wafer surface from the polishing start time under a first condition; and at a time point when the change in the polishing pad temperature changes from rising to falling, switching from the first condition to a second condition to polish the wafer surface. In this manner, edge roll-off can be suppressed by accurately detecting that a natural oxide film has been removed. 本发明提供一种单面抛光方法，其为使用抛光垫进行晶圆的表面的抛光的单面抛光方法，其特征在于，监测所述抛光垫的温度变化，从开始所述抛光时起以第一条件对所述晶圆的表面进行抛光，在所述抛光垫的温度变化从上升变成下降的时间点，从所述第一条件切换成第二条件来对所述晶圆的表面进行抛光。由此，能够正确地检测出自然氧化膜已被去除从而抑制边缘塌边。