Metal-oxide-semiconductor field effect transistor (MOSFET) device groove terminal and preparation method

The invention discloses an MOSFET device groove terminal and a preparation method, and relates to the field of semiconductor power devices. The problems that when an existing MOSFET device is prepared, in order to improve the pressure resistance of the device, the production process difficulty is high, and the cost is high are solved. The method comprises an active region groove, a first peripheral voltage-withstanding region groove, a plurality of second peripheral voltage-withstanding region grooves, a first conduction type drift layer, a second conduction type body region and a first conduction type source region; the active region groove, the first peripheral voltage-withstanding region groove and the second peripheral voltage-withstanding region groove are arranged on the first conductive type drift layer; the first conductive type source region is arranged on one side, far away from the first peripheral voltage-withstanding region groove, of the active region groove; the bottom of the first conductive t