SOI wafer with high heat dissipation performance and preparation method of SOI wafer

The invention provides an SOI wafer with high heat dissipation performance and a preparation method of the SOI wafer. The SOI wafer sequentially comprises a bulk silicon wafer, a buried oxide layer and a silicon device layer, a groove with a preset depth is formed in one side, close to the buried oxide layer, of the bulk silicon wafer, the groove is filled with a high-thermal-conductivity material, the high-thermal-conductivity material is fixed by adopting heat dissipation glue, and the high-thermal-conductivity material is a carbon nano tube or molybdenum disulfide. According to the invention, the grooves are formed in the bulk silicon wafer, and the grooves are filled with the high-thermal-conductivity material made of the carbon nanotubes or the molybdenum disulfide, so that the heat dissipation performance of an SOI circuit can be effectively improved based on the high thermal conductivity of the carbon nanotubes and the molybdenum disulfide, and the size of the SOI wafer is made to be larger; in additio