SEMICONDUCTOR DEVICE

A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate, an upper electrode on the capacitor dielectric film, an interface layer including a hydrogen blocking film and a hydrogen bypass film on the upper electrode, the hydrogen blocking film including a conductive material, and a contact plug penetrating the interface layer and electrically connected to the upper electrode. 提供了半导体装置。所述半导体装置包括：下电极，位于基底上；电容器介电膜，在下电极上沿着下电极的与基底垂直的侧表面延伸；上电极，位于电容器介电膜上；界面层，包括位于上电极上的氢阻挡膜和氢旁路膜，氢旁路膜包括导电材料；以及接触插塞，穿透界面层，并且电连接到上电极。