Semiconductor device
The embodiment of the invention discloses a semiconductor device and a forming method thereof. An exemplary semiconductor device includes a dielectric layer formed on a power rail; a bottom semiconductor layer formed on the dielectric layer; a backside spacer along a sidewall of the bottom semicondu...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The embodiment of the invention discloses a semiconductor device and a forming method thereof. An exemplary semiconductor device includes a dielectric layer formed on a power rail; a bottom semiconductor layer formed on the dielectric layer; a backside spacer along a sidewall of the bottom semiconductor layer; a conductive structure contacting sidewalls of the dielectric layer and sidewalls of the backside spacer; a plurality of channel semiconductor layers on the bottom semiconductor layer, in which the channel semiconductor layers are stacked upward and separated from each other; the metal gate structure covers each channel semiconductor layer; and an epitaxial source/drain structure contacting a sidewall of each channel semiconductor layer, where the epitaxial source/drain structure contacts the conductive structure, and the conductive structure contacts the power rail.
本发明实施例公开一种半导体装置与其形成方法。示例性的半导体装置包括介电层,形成于电源轨上;底部半导体层,形成于介电层上;背侧间隔物,沿着底部半导体层的侧壁;导电结构,接触介电层的侧壁与背侧间隔物的侧壁;多个通道半导体层,位于底部半导体层上,其中通道半导体层向上堆叠并彼此分开; |
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