Vertical GaN diode with inverted trapezoidal groove

The invention belongs to the technical field of power semiconductors, and relates to a vertical GaN diode with an inverted trapezoidal groove. The diode is mainly characterized in that through the design of an inverted trapezoidal groove structure, a dielectric layer is inserted between a part of Schottky anode metal and a barrier layer, and a P-GaN highly-doped barrier layer and a carbon-doped GaN barrier layer are introduced into a body so as to effectively reduce an electric field in the barrier layer; therefore, compared with a traditional current aperture vertical electron transistor (CAVET), the lateral size of the inverted trapezoidal bottom current aperture is increased to reduce on resistance, and reverse leakage current can be effectively inhibited; meanwhile, the lateral GaN HEMT device has the advantage that two-dimensional electron gas in the lateral GaN HEMT device serves as a channel so as to reduce the on-resistance of the device. 本发明属于功率半导体技术领域，涉及一种具有倒梯形槽的垂直GaN二极管。本发明主要特征在于：通过倒梯形槽结构设计，新件构在部分肖