Multi-stage petal-shaped body region metal oxide semiconductor power device and manufacturing method thereof

The invention discloses a multi-stage petal-shaped body region metal oxide semiconductor power device and a manufacturing method thereof, and mainly solves the problems of poor on resistance, poor switching frequency and poor breakdown characteristic of traditional similar devices. The device comprises a drain electrode (11), an N + type substrate (1) and an N-type epitaxial layer (2) from bottom to top; the middle part of the N-type epitaxial layer (2) is provided with an isolation groove (6), and the upper part in the isolation groove is provided with a groove gate (8); a P-type layer (4) and an N + type layer (5) are sequentially arranged on the upper part of the N-type epitaxial layer (2); a passivation medium (9) is arranged on the trench gate, the side wall of the trench gate and the upper part of a part of the N + type layer; the upper part and the side surface of the passivation medium wrap a source electrode (10); petal-shaped regions (3) consisting of m petal-shaped structures are arranged on the tw