MULTIPLE ARC CHAMBER SOURCE
An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to a carrousel that translates or rotates the respective one of the plurality of arc chambers to a beamline position associated with the beamline. One or more of the plurality of arc chambers can have at least one unique feature, or two or more of the plurality of arc chambers can be generally identical to one another.
一种用于离子注入系统的离子源具有多个电弧室。离子源基于多个电弧室中的相应一个电弧室相对于束线的位置而形成出自该多个电弧室中的该相应一个电弧室的离子束。电弧室耦接到转盘,转盘将该多个电弧室中的该相应一个电弧室平移或旋转到与束线相关联的束线位置。该多个电弧室中的一个或多个电弧室可以具有至少一种独特的特征,或者该多个电弧室中的两个或更多个电弧室可以彼此大体上相同。 |
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