Semiconductor structure and forming method thereof

The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps of forming a contact hole in a substrate; depositing a buffer layer in the contact hole; depositing a stress layer on the surface of the buffer layer; and depositing a filling layer on the surface of the stress layer, wherein the stress layer applies pressure stress to the filling layer. The formation method of the semiconductor structure can reduce or eliminate the holes in the filling layer, and improve the performance of the semiconductor structure. 本申请公开一种半导体结构及其形成方法，所述半导体结构的形成方法包括：衬底，所述衬底内形成有接触孔；在所述接触孔内沉积缓冲层；在所述缓冲层表面沉积应力层；在所述应力层表面沉积填充层，所述应力层对所述填充层施加压应力。所述半导体结构的形成方法能够减少或消除填充层内的孔洞，提高半导体结构的性能。