Junction barrier Schottky device with heterojunction

The invention discloses a junction barrier Schottky device with a heterojunction, which relates to the field of Schottky devices. The junction barrier Schottky device is characterized in that a variable doping region of a second doping type is formed on the surface of a semiconductor epitaxial layer with a first doping type; a polycrystalline silicon layer which penetrates through the variable doping region from the surface to the bottom and has a second doping type is arranged in the variable doping region. When the junction barrier Schottky device is positively biased, current flows to the drift region through a heterojunction formed by the polycrystalline silicon layer, the variable doping region outside the polycrystalline silicon layer and the contact interface of the semiconductor epitaxial layer and a Schottky junction formed by the anode metal layer and the contact interface of the semiconductor epitaxial layer, and the current density is relatively large; due to the fact that the overall doping conce