Sensor structure, preparation method thereof and electronic equipment

The invention provides a sensor structure, a preparation method thereof, and electronic equipment. The sensor structure comprises a silicon substrate; a film layer structure arranged on one side of the silicon substrate, wherein a cavity is formed in the side, away from the film layer structure, of the silicon substrate; a packaging substrate arranged on one side, far away from the film layer structure, of the silicon substrate; and a connecting layer arranged between the silicon substrate and the packaging substrate, wherein a first gap is formed in the connecting layer, and the first gap is used for communicating the cavity with the environment outside the sensor structure. The sensor structure provided by the embodiment of the invention can simplify the process, improve the production efficiency and reduce the cost. 本申请提供了一种传感器结构及其制备方法、电子设备，该传感器结构包括：硅基底；设置在硅基底一侧的膜层结构，其中，硅基底远离膜层结构的一侧设置有空腔；封装基板，封装基板设置在硅基底远离膜层结构的一侧；连接层，设置在硅基底与封装基板之间，连接层中形成有第一空隙，第一空隙用于连通空腔与传感器结构之外的环境。本申请实施例提供的传感器结构能够简化工艺、提高生产效率以及降低成本。