Method for measuring removal thickness of silicon surface and carbon surface in silicon carbide double-sided polishing
The invention belongs to the technical field of semiconductor material processing, and relates to a method for measuring the removal thickness of a silicon surface and a carbon surface in silicon carbide double-sided polishing. The method specifically comprises the steps that epitaxial growth is car...
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| creator | ZHAO LIXIA LI PENG JIN XIAOXI NIU YULONG WEI RUXING LI BIN ZHANG FENG YUAN SHUAIWU |
| description | The invention belongs to the technical field of semiconductor material processing, and relates to a method for measuring the removal thickness of a silicon surface and a carbon surface in silicon carbide double-sided polishing. The method specifically comprises the steps that epitaxial growth is carried out on a to-be-measured polished wafer to form an epitaxial layer; the overall total thickness Ttotal 1 of the polished wafer and the epitaxial layer and the thickness Texternal 1 of the epitaxial layer are measured; double-sided polishing is conducted for t; after polishing, the overall total thickness Ttotal 2 of the polished wafer and the epitaxial layer and the thickness Texternal 2 of the epitaxial layer are tested again; delta Ttotal = Ttotal 1 - Ttotal 2; delta Tsilicon surface = Texternal 1 - Texternal 2; the total polishing rate = delta Ttotal/t; the polishing rate of the silicon surface = delta Tsilicon surface/t; and the polishing rate of the carbon surface = (delta Ttotal - delta Tsilicon surface)/ |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN113664694A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN113664694A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN113664694A3</originalsourceid><addsrcrecordid>eNqNjcEKwjAQRHvxIOo_rB_QQ2kJeJSieNGT95ImG7OYZku27fcbQcSjpxlmHjPrYrni5NmC4wQDapkTxQckHHjRASZP5hlRBNiBUCDDETLjtEHQ0YLRqf-JKH6pd0MWwfLcBywlewsjBxKfH7bFyukguPvoptifT_f2UuLIHcqYxyJOXXurqlqpRh2aY_0P8wJAakXS</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for measuring removal thickness of silicon surface and carbon surface in silicon carbide double-sided polishing</title><source>esp@cenet</source><creator>ZHAO LIXIA ; LI PENG ; JIN XIAOXI ; NIU YULONG ; WEI RUXING ; LI BIN ; ZHANG FENG ; YUAN SHUAIWU</creator><creatorcontrib>ZHAO LIXIA ; LI PENG ; JIN XIAOXI ; NIU YULONG ; WEI RUXING ; LI BIN ; ZHANG FENG ; YUAN SHUAIWU</creatorcontrib><description>The invention belongs to the technical field of semiconductor material processing, and relates to a method for measuring the removal thickness of a silicon surface and a carbon surface in silicon carbide double-sided polishing. The method specifically comprises the steps that epitaxial growth is carried out on a to-be-measured polished wafer to form an epitaxial layer; the overall total thickness Ttotal 1 of the polished wafer and the epitaxial layer and the thickness Texternal 1 of the epitaxial layer are measured; double-sided polishing is conducted for t; after polishing, the overall total thickness Ttotal 2 of the polished wafer and the epitaxial layer and the thickness Texternal 2 of the epitaxial layer are tested again; delta Ttotal = Ttotal 1 - Ttotal 2; delta Tsilicon surface = Texternal 1 - Texternal 2; the total polishing rate = delta Ttotal/t; the polishing rate of the silicon surface = delta Tsilicon surface/t; and the polishing rate of the carbon surface = (delta Ttotal - delta Tsilicon surface)/</description><language>chi ; eng</language><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; PERFORMING OPERATIONS ; PHYSICS ; POLISHING ; TESTING ; TRANSPORTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211119&DB=EPODOC&CC=CN&NR=113664694A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211119&DB=EPODOC&CC=CN&NR=113664694A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHAO LIXIA</creatorcontrib><creatorcontrib>LI PENG</creatorcontrib><creatorcontrib>JIN XIAOXI</creatorcontrib><creatorcontrib>NIU YULONG</creatorcontrib><creatorcontrib>WEI RUXING</creatorcontrib><creatorcontrib>LI BIN</creatorcontrib><creatorcontrib>ZHANG FENG</creatorcontrib><creatorcontrib>YUAN SHUAIWU</creatorcontrib><title>Method for measuring removal thickness of silicon surface and carbon surface in silicon carbide double-sided polishing</title><description>The invention belongs to the technical field of semiconductor material processing, and relates to a method for measuring the removal thickness of a silicon surface and a carbon surface in silicon carbide double-sided polishing. The method specifically comprises the steps that epitaxial growth is carried out on a to-be-measured polished wafer to form an epitaxial layer; the overall total thickness Ttotal 1 of the polished wafer and the epitaxial layer and the thickness Texternal 1 of the epitaxial layer are measured; double-sided polishing is conducted for t; after polishing, the overall total thickness Ttotal 2 of the polished wafer and the epitaxial layer and the thickness Texternal 2 of the epitaxial layer are tested again; delta Ttotal = Ttotal 1 - Ttotal 2; delta Tsilicon surface = Texternal 1 - Texternal 2; the total polishing rate = delta Ttotal/t; the polishing rate of the silicon surface = delta Tsilicon surface/t; and the polishing rate of the carbon surface = (delta Ttotal - delta Tsilicon surface)/</description><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICS</subject><subject>POLISHING</subject><subject>TESTING</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjcEKwjAQRHvxIOo_rB_QQ2kJeJSieNGT95ImG7OYZku27fcbQcSjpxlmHjPrYrni5NmC4wQDapkTxQckHHjRASZP5hlRBNiBUCDDETLjtEHQ0YLRqf-JKH6pd0MWwfLcBywlewsjBxKfH7bFyukguPvoptifT_f2UuLIHcqYxyJOXXurqlqpRh2aY_0P8wJAakXS</recordid><startdate>20211119</startdate><enddate>20211119</enddate><creator>ZHAO LIXIA</creator><creator>LI PENG</creator><creator>JIN XIAOXI</creator><creator>NIU YULONG</creator><creator>WEI RUXING</creator><creator>LI BIN</creator><creator>ZHANG FENG</creator><creator>YUAN SHUAIWU</creator><scope>EVB</scope></search><sort><creationdate>20211119</creationdate><title>Method for measuring removal thickness of silicon surface and carbon surface in silicon carbide double-sided polishing</title><author>ZHAO LIXIA ; LI PENG ; JIN XIAOXI ; NIU YULONG ; WEI RUXING ; LI BIN ; ZHANG FENG ; YUAN SHUAIWU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113664694A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICS</topic><topic>POLISHING</topic><topic>TESTING</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHAO LIXIA</creatorcontrib><creatorcontrib>LI PENG</creatorcontrib><creatorcontrib>JIN XIAOXI</creatorcontrib><creatorcontrib>NIU YULONG</creatorcontrib><creatorcontrib>WEI RUXING</creatorcontrib><creatorcontrib>LI BIN</creatorcontrib><creatorcontrib>ZHANG FENG</creatorcontrib><creatorcontrib>YUAN SHUAIWU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHAO LIXIA</au><au>LI PENG</au><au>JIN XIAOXI</au><au>NIU YULONG</au><au>WEI RUXING</au><au>LI BIN</au><au>ZHANG FENG</au><au>YUAN SHUAIWU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for measuring removal thickness of silicon surface and carbon surface in silicon carbide double-sided polishing</title><date>2021-11-19</date><risdate>2021</risdate><abstract>The invention belongs to the technical field of semiconductor material processing, and relates to a method for measuring the removal thickness of a silicon surface and a carbon surface in silicon carbide double-sided polishing. The method specifically comprises the steps that epitaxial growth is carried out on a to-be-measured polished wafer to form an epitaxial layer; the overall total thickness Ttotal 1 of the polished wafer and the epitaxial layer and the thickness Texternal 1 of the epitaxial layer are measured; double-sided polishing is conducted for t; after polishing, the overall total thickness Ttotal 2 of the polished wafer and the epitaxial layer and the thickness Texternal 2 of the epitaxial layer are tested again; delta Ttotal = Ttotal 1 - Ttotal 2; delta Tsilicon surface = Texternal 1 - Texternal 2; the total polishing rate = delta Ttotal/t; the polishing rate of the silicon surface = delta Tsilicon surface/t; and the polishing rate of the carbon surface = (delta Ttotal - delta Tsilicon surface)/</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | DRESSING OR CONDITIONING OF ABRADING SURFACES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PERFORMING OPERATIONS PHYSICS POLISHING TESTING TRANSPORTING |
| title | Method for measuring removal thickness of silicon surface and carbon surface in silicon carbide double-sided polishing |
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