Method for measuring removal thickness of silicon surface and carbon surface in silicon carbide double-sided polishing

The invention belongs to the technical field of semiconductor material processing, and relates to a method for measuring the removal thickness of a silicon surface and a carbon surface in silicon carbide double-sided polishing. The method specifically comprises the steps that epitaxial growth is carried out on a to-be-measured polished wafer to form an epitaxial layer; the overall total thickness Ttotal 1 of the polished wafer and the epitaxial layer and the thickness Texternal 1 of the epitaxial layer are measured; double-sided polishing is conducted for t; after polishing, the overall total thickness Ttotal 2 of the polished wafer and the epitaxial layer and the thickness Texternal 2 of the epitaxial layer are tested again; delta Ttotal = Ttotal 1 - Ttotal 2; delta Tsilicon surface = Texternal 1 - Texternal 2; the total polishing rate = delta Ttotal/t; the polishing rate of the silicon surface = delta Tsilicon surface/t; and the polishing rate of the carbon surface = (delta Ttotal - delta Tsilicon surface)/