Wafer processing device

The invention discloses a wafer processing device which comprises a cavity, a carrying table is arranged in the cavity, a wafer is arranged on the carrying table, a capacitance matcher is installed outside the cavity, a gas baffle is fixedly connected to the interior of the cavity, through holes are...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WANG YANLIANG, WAN YONGDONG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a wafer processing device which comprises a cavity, a carrying table is arranged in the cavity, a wafer is arranged on the carrying table, a capacitance matcher is installed outside the cavity, a gas baffle is fixedly connected to the interior of the cavity, through holes are evenly formed in the gas baffle, a gas inlet pipe is communicated with the top of the cavity, and pre-heating gas is introduced into the cavity through the gas inlet pipe. According to the wafer processing device of the invention, through the preheating of the cavity before wafer running, the instability of the etching/photoresist removing rate caused by traditional heat accumulation is solved, the wafer running process can be stabilized, the rate of finished products is improved, the defects in the research and development or mass production process are reduced, and a large amount of manpower and material resources are saved. 本发明公开了一种晶圆加工装置,包括:腔室,所述腔室的内部设有载台,所述载台上设有晶圆,所述腔室的外部安装电容匹配器,所述腔室的内部固定连接有气体挡板,所述气体挡板上均匀开设有通