Preparation method of silicon-based size-controllable beta-Ga2O3 nanowire

The invention discloses a preparation method of a silicon-based size-controllable beta-Ga2O3 nanowire. The preparation method of the silicon-based size-controllable beta-Ga2O3 nanowire comprises the following steps: firstly, depositing gold (Au) catalyst layers with different thicknesses on a single crystal Si (100) substrate, and carrying out in-situ spheroidizing annealing on the catalyst layers to obtain Au nanoparticles with different sizes; and then carrying out magnetron sputtering to grow beta-Ga2O3 nanowires, and carrying out in-situ annealing to obtain the beta-Ga2O3 nanowires with different sizes. The beta-Ga2O3 nanowire with the advantages of fewer defects, high resistivity, uniformity, compactness and the like can be obtained by regulating and controlling the size of the beta-Ga2O3 nanowire. The beta-Ga2O3 nanowires with different sizes prepared by the method show excellent performance in application to solar-blind ultraviolet detectors, can be applied to missile approaching early warning systems,