SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
A semiconductor photoresist composition and a method of forming patterns using the composition are disclosed. The semiconductor photoresist composition includes (A) an organometallic compound, (B) an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25 DEG C., and a pKa...
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| creator | MOON KYUNG-SOO WOO CHANG-SOO CHAE SEUNG-YONG KIM JAE-HYUN NAM GUNG-RAN HAN SEUNG CHUN HWAN-SUNG |
| description | A semiconductor photoresist composition and a method of forming patterns using the composition are disclosed. The semiconductor photoresist composition includes (A) an organometallic compound, (B) an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25 DEG C., and a pKa of about 3 to about 5, and (C) a solvent.
本发明公开一种半导体光刻胶组合物和一种使用其形成图案的方法，半导体光刻胶组合物包含(A)有机金属化合物、(B)具有在25℃下小于或等于约1.0mmHg的蒸气压和约3到约5的pKa的有机酸以及(C)溶剂。 |
| format | Patent |
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本发明公开一种半导体光刻胶组合物和一种使用其形成图案的方法，半导体光刻胶组合物包含(A)有机金属化合物、(B)具有在25℃下小于或等于约1.0mmHg的蒸气压和约3到约5的pKa的有机酸以及(C)溶剂。</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211116&DB=EPODOC&CC=CN&NR=113655689A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211116&DB=EPODOC&CC=CN&NR=113655689A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MOON KYUNG-SOO</creatorcontrib><creatorcontrib>WOO CHANG-SOO</creatorcontrib><creatorcontrib>CHAE SEUNG-YONG</creatorcontrib><creatorcontrib>KIM JAE-HYUN</creatorcontrib><creatorcontrib>NAM GUNG-RAN</creatorcontrib><creatorcontrib>HAN SEUNG</creatorcontrib><creatorcontrib>CHUN HWAN-SUNG</creatorcontrib><title>SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><description>A semiconductor photoresist composition and a method of forming patterns using the composition are disclosed. The semiconductor photoresist composition includes (A) an organometallic compound, (B) an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25 DEG C., and a pKa of about 3 to about 5, and (C) a solvent.
本发明公开一种半导体光刻胶组合物和一种使用其形成图案的方法，半导体光刻胶组合物包含(A)有机金属化合物、(B)具有在25℃下小于或等于约1.0mmHg的蒸气压和约3到约5的pKa的有机酸以及(C)溶剂。</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgKdvX1dPb3cwl1DvEPUgjw8AdSrsGewSEKzv6-Af7BniGe_n4Kjn4uCr6uIR7-Lgr-bgpu_kG-nn7uCgGOISGuQX7BCqHBIG6IhyuyJh4G1rTEnOJUXijNzaDo5hri7KGbWpAfn1pckJicmpdaEu_sZ2hobGZqamZh6WhMjBoAvVIylw</recordid><startdate>20211116</startdate><enddate>20211116</enddate><creator>MOON KYUNG-SOO</creator><creator>WOO CHANG-SOO</creator><creator>CHAE SEUNG-YONG</creator><creator>KIM JAE-HYUN</creator><creator>NAM GUNG-RAN</creator><creator>HAN SEUNG</creator><creator>CHUN HWAN-SUNG</creator><scope>EVB</scope></search><sort><creationdate>20211116</creationdate><title>SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><author>MOON KYUNG-SOO ; WOO CHANG-SOO ; CHAE SEUNG-YONG ; KIM JAE-HYUN ; NAM GUNG-RAN ; HAN SEUNG ; CHUN HWAN-SUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113655689A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>MOON KYUNG-SOO</creatorcontrib><creatorcontrib>WOO CHANG-SOO</creatorcontrib><creatorcontrib>CHAE SEUNG-YONG</creatorcontrib><creatorcontrib>KIM JAE-HYUN</creatorcontrib><creatorcontrib>NAM GUNG-RAN</creatorcontrib><creatorcontrib>HAN SEUNG</creatorcontrib><creatorcontrib>CHUN HWAN-SUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MOON KYUNG-SOO</au><au>WOO CHANG-SOO</au><au>CHAE SEUNG-YONG</au><au>KIM JAE-HYUN</au><au>NAM GUNG-RAN</au><au>HAN SEUNG</au><au>CHUN HWAN-SUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><date>2021-11-16</date><risdate>2021</risdate><abstract>A semiconductor photoresist composition and a method of forming patterns using the composition are disclosed. The semiconductor photoresist composition includes (A) an organometallic compound, (B) an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25 DEG C., and a pKa of about 3 to about 5, and (C) a solvent.
本发明公开一种半导体光刻胶组合物和一种使用其形成图案的方法，半导体光刻胶组合物包含(A)有机金属化合物、(B)具有在25℃下小于或等于约1.0mmHg的蒸气压和约3到约5的pKa的有机酸以及(C)溶剂。</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION |
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