SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

A semiconductor photoresist composition and a method of forming patterns using the composition are disclosed. The semiconductor photoresist composition includes (A) an organometallic compound, (B) an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25 DEG C., and a pKa...

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Bibliographische Detailangaben
Hauptverfasser:	MOON KYUNG-SOO, WOO CHANG-SOO, CHAE SEUNG-YONG, KIM JAE-HYUN, NAM GUNG-RAN, HAN SEUNG, CHUN HWAN-SUNG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A semiconductor photoresist composition and a method of forming patterns using the composition are disclosed. The semiconductor photoresist composition includes (A) an organometallic compound, (B) an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25 DEG C., and a pKa of about 3 to about 5, and (C) a solvent. 本发明公开一种半导体光刻胶组合物和一种使用其形成图案的方法，半导体光刻胶组合物包含(A)有机金属化合物、(B)具有在25℃下小于或等于约1.0mmHg的蒸气压和约3到约5的pKa的有机酸以及(C)溶剂。