Systems and methods for junction termination of wide band gap super-junction power devices

A disclosed super-junction (SJ) device includes a first epitaxial (epi) layer that forms a first SJ layer of the SJ device, and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area of the first and second epi layers includes a first set of SJ pillars comprising a particular doping concentration of a first conductivity type and a second set of SJ pillars comprising the particular doping concentration of a second conductivity type. A termination area of the first and second epi layers has a minimized epi doping concentration of the first conductivity type that is less than the particular doping concentration, and the termination area of the second epi layer includes a plurality of floating regions of the second conductivity type that form a junction termination of the SJ device. 公开的超结(SJ)器件包括形成SJ器件的第一SJ层的第一外延(epi)层，并且包括设置在第一SJ层上并形成SJ器件的器件层的第二epi层。第一epi层和第二epi层的有源区域包括：包括第一导电类型的特定掺杂浓度的第一组SJ柱、和包括第二导电类型的该特定掺杂浓度的第二组SJ柱。第一epi层和第二epi层的终端区域具有第一导电类型的小于该特定掺