Ultrasonic flight sensor and manufacturing method thereof

The invention provides an ultrasonic flight sensor and a manufacturing method thereof. The sensor comprises a semiconductor substrate, a supporting layer which is arranged on the surface of the semiconductor substrate and is provided with an inner hole, an elastic film which covers the inner hole and is arranged on the surface of the supporting layer, and an excitation layer which is arranged in the inner hole and is attached to the surface, facing the inner hole, of the elastic film, the excitation layer shows pattern design and comprises a first electrode layer, a second electrode layer and a piezoelectric layer arranged between the first electrode layer and the second electrode layer. According to the invention, the ultrasonic flight sensor is manufactured by adopting a semiconductor process, so that the miniaturization and easy integration of the ultrasonic flight sensor are realized, and the electronic equipment applying the ultrasonic sensor is helped to realize miniaturization and thinning. 本发明提供一种超声波飞