High-gain photoelectric detector

The invention discloses a high-gain photoelectric detector which comprises an emitting electrode, a base electrode, an absorption layer and a collector electrode which are sequentially arranged from bottom to top, and further comprises a periodic quantum structure layer which is arranged between the emitting electrode and the collector electrode or arranged in the base electrode or arranged in the emitting electrode. The periodic quantum structure layer comprises a repeated structure of a plurality of periods, and each period contains a semiconductor heterojunction. The periodic quantum structure can block diffusion of a base electrode hole to the emitting electrode and improve the electron injection ratio of an emitter junction and the amplification factor of the transistor on one hand, and on the other hand, the periodic quantum structure can bind the hole with larger effective mass in the multilayer quantum structure to reduce the recombination loss, and enables the hole life in the device to exceed the el