Preparation method of hydrogenated nanocrystalline silicon film for solar cells

The invention relates to a preparation method of a hydrogenated nanocrystalline silicon film for solar cells. The preparation method comprises the following steps of: S1, rapid thermal annealing: putting an amorphous silicon film into an annealing furnace under atmosphere protection for annealing treatment to convert the non-crystalline film into a nanocrystalline film; S2, regional melting and recrystallization: irradiating the surface of a silicon-based film with a beam of high-energy source to heat the film material to a very high temperature within a very short time, melting the film material at a high temperature, and then carrying out recrystallization; S3, metal induced crystallization: plating a layer of metal film on a substrate, embedding a layer of amorphous silicon film on the metal film, and annealing at a lower temperature; and S4, high-hydrogen dilution vapor deposition: installing a heating wire in a vacuum reaction chamber, and when high-hydrogen diluted SiH4 or other source gas passes throug