Chemical mechanical polishing solution for monocrystalline silicon and preparation method thereof

The invention discloses a chemical mechanical polishing solution for monocrystalline silicon. The polishing solution is prepared from the following raw materials in percentage by weight: 0.1%wt-40%wt of an abrasive, 0.05%wt-5%wt of an electrolyte, 1%wt-35%wt of a surfactant and the balance of deioni...

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creator WANG LEI
WAN XUJUN
description The invention discloses a chemical mechanical polishing solution for monocrystalline silicon. The polishing solution is prepared from the following raw materials in percentage by weight: 0.1%wt-40%wt of an abrasive, 0.05%wt-5%wt of an electrolyte, 1%wt-35%wt of a surfactant and the balance of deionized water, and the pH value of the polishing solution is regulated to 8.5-11.5 by adopting a pH regulator. The invention also discloses a preparation method of the chemical mechanical polishing solution for monocrystalline silicon, which comprises the following steps of: firstly, adding the abrasive into the deionized water and stirring well, then adding the electrolyte and the surfactant and further stirring well, adding the pH regulator, adjusting the pH value of the mixed solution, and fully and uniformly stirring to obtain the polishing solution. By adopting the chemical mechanical polishing solution for monocrystalline silicon and the preparation method thereof, the problems that the existing polishing solutio
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN113621313A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN113621313A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN113621313A3</originalsourceid><addsrcrecordid>eNqNijEKAjEQAK-xEPUP6wMsYsBeDsXKyv5YchuzsNkNSSz8vXL4AKsZmFkPOCbKHFAgU0ioixYTbon1Cc3k1dkUolXIphbqu3UUYSVoLBy-DXWGUqlgxeXN1JPN0BNVsrgdVhGl0e7HzbC_Xh7j7UDFJmoFAyn1abw7509H550_-3-eD50BPrg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Chemical mechanical polishing solution for monocrystalline silicon and preparation method thereof</title><source>esp@cenet</source><creator>WANG LEI ; WAN XUJUN</creator><creatorcontrib>WANG LEI ; WAN XUJUN</creatorcontrib><description>The invention discloses a chemical mechanical polishing solution for monocrystalline silicon. The polishing solution is prepared from the following raw materials in percentage by weight: 0.1%wt-40%wt of an abrasive, 0.05%wt-5%wt of an electrolyte, 1%wt-35%wt of a surfactant and the balance of deionized water, and the pH value of the polishing solution is regulated to 8.5-11.5 by adopting a pH regulator. The invention also discloses a preparation method of the chemical mechanical polishing solution for monocrystalline silicon, which comprises the following steps of: firstly, adding the abrasive into the deionized water and stirring well, then adding the electrolyte and the surfactant and further stirring well, adding the pH regulator, adjusting the pH value of the mixed solution, and fully and uniformly stirring to obtain the polishing solution. By adopting the chemical mechanical polishing solution for monocrystalline silicon and the preparation method thereof, the problems that the existing polishing solutio</description><language>chi ; eng</language><subject>ADHESIVES ; CHEMISTRY ; DYES ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SKI WAXES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211109&amp;DB=EPODOC&amp;CC=CN&amp;NR=113621313A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211109&amp;DB=EPODOC&amp;CC=CN&amp;NR=113621313A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WANG LEI</creatorcontrib><creatorcontrib>WAN XUJUN</creatorcontrib><title>Chemical mechanical polishing solution for monocrystalline silicon and preparation method thereof</title><description>The invention discloses a chemical mechanical polishing solution for monocrystalline silicon. The polishing solution is prepared from the following raw materials in percentage by weight: 0.1%wt-40%wt of an abrasive, 0.05%wt-5%wt of an electrolyte, 1%wt-35%wt of a surfactant and the balance of deionized water, and the pH value of the polishing solution is regulated to 8.5-11.5 by adopting a pH regulator. The invention also discloses a preparation method of the chemical mechanical polishing solution for monocrystalline silicon, which comprises the following steps of: firstly, adding the abrasive into the deionized water and stirring well, then adding the electrolyte and the surfactant and further stirring well, adding the pH regulator, adjusting the pH value of the mixed solution, and fully and uniformly stirring to obtain the polishing solution. By adopting the chemical mechanical polishing solution for monocrystalline silicon and the preparation method thereof, the problems that the existing polishing solutio</description><subject>ADHESIVES</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SKI WAXES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNijEKAjEQAK-xEPUP6wMsYsBeDsXKyv5YchuzsNkNSSz8vXL4AKsZmFkPOCbKHFAgU0ioixYTbon1Cc3k1dkUolXIphbqu3UUYSVoLBy-DXWGUqlgxeXN1JPN0BNVsrgdVhGl0e7HzbC_Xh7j7UDFJmoFAyn1abw7509H550_-3-eD50BPrg</recordid><startdate>20211109</startdate><enddate>20211109</enddate><creator>WANG LEI</creator><creator>WAN XUJUN</creator><scope>EVB</scope></search><sort><creationdate>20211109</creationdate><title>Chemical mechanical polishing solution for monocrystalline silicon and preparation method thereof</title><author>WANG LEI ; WAN XUJUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113621313A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>ADHESIVES</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SKI WAXES</topic><toplevel>online_resources</toplevel><creatorcontrib>WANG LEI</creatorcontrib><creatorcontrib>WAN XUJUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WANG LEI</au><au>WAN XUJUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chemical mechanical polishing solution for monocrystalline silicon and preparation method thereof</title><date>2021-11-09</date><risdate>2021</risdate><abstract>The invention discloses a chemical mechanical polishing solution for monocrystalline silicon. The polishing solution is prepared from the following raw materials in percentage by weight: 0.1%wt-40%wt of an abrasive, 0.05%wt-5%wt of an electrolyte, 1%wt-35%wt of a surfactant and the balance of deionized water, and the pH value of the polishing solution is regulated to 8.5-11.5 by adopting a pH regulator. The invention also discloses a preparation method of the chemical mechanical polishing solution for monocrystalline silicon, which comprises the following steps of: firstly, adding the abrasive into the deionized water and stirring well, then adding the electrolyte and the surfactant and further stirring well, adding the pH regulator, adjusting the pH value of the mixed solution, and fully and uniformly stirring to obtain the polishing solution. By adopting the chemical mechanical polishing solution for monocrystalline silicon and the preparation method thereof, the problems that the existing polishing solutio</abstract><oa>free_for_read</oa></addata></record>
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subjects ADHESIVES
CHEMISTRY
DYES
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SKI WAXES
title Chemical mechanical polishing solution for monocrystalline silicon and preparation method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T21%3A54%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WANG%20LEI&rft.date=2021-11-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN113621313A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true