Chemical mechanical polishing solution for monocrystalline silicon and preparation method thereof

The invention discloses a chemical mechanical polishing solution for monocrystalline silicon. The polishing solution is prepared from the following raw materials in percentage by weight: 0.1%wt-40%wt of an abrasive, 0.05%wt-5%wt of an electrolyte, 1%wt-35%wt of a surfactant and the balance of deioni...

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Hauptverfasser: WANG LEI, WAN XUJUN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention discloses a chemical mechanical polishing solution for monocrystalline silicon. The polishing solution is prepared from the following raw materials in percentage by weight: 0.1%wt-40%wt of an abrasive, 0.05%wt-5%wt of an electrolyte, 1%wt-35%wt of a surfactant and the balance of deionized water, and the pH value of the polishing solution is regulated to 8.5-11.5 by adopting a pH regulator. The invention also discloses a preparation method of the chemical mechanical polishing solution for monocrystalline silicon, which comprises the following steps of: firstly, adding the abrasive into the deionized water and stirring well, then adding the electrolyte and the surfactant and further stirring well, adding the pH regulator, adjusting the pH value of the mixed solution, and fully and uniformly stirring to obtain the polishing solution. By adopting the chemical mechanical polishing solution for monocrystalline silicon and the preparation method thereof, the problems that the existing polishing solutio