Metal-insulator-metal capacitor

The invention discloses a metal-insulator-metal (MIM) capacitor, and the MIM capacitor comprises a semiconductor substrate having a conductor layer thereon; a dielectric layer which covers the semiconductor substrate and the conductor layer; a first capacitor electrode disposed on the dielectric layer, where the first capacitor electrode partially overlaps the conductor layer when viewed from above; a capacitor dielectric layer which is arranged on the first capacitor electrode; a second capacitor electrode which is arranged on the capacitor dielectric layer; and at least one through hole which is disposed in the dielectric layer and electrically connecting the first capacitor electrode with the conductor layer. 本发明公开一种金属-绝缘体-金属(MIM)电容器，包含一半导体基底，其上具有一导体层；一介电层，覆盖所述半导体基底和所述导体层；一第一电容器电极，设置在所述介电层上，其中从上方观察时，所述第一电容器电极与所述导体层部分重叠；一电容器介电层，设置在所述第一电容器电极上；一第二电容器电极，设置在所述电容器介电层上；以及至少一个通孔，设置在所述介电层中并且将所述第一电容器电极与所述导体层电连接。