On-chip near-zero transmission type sensor based on aggregation effect and detection method
The invention discloses an on-chip near-zero transmission type sensor based on an aggregation effect and a detection method. The on-chip near-zero transmission type sensor comprises a power divider, a synthesizer, a split-ring resonator I, a split-ring resonator II and two branches, wherein the powe...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses an on-chip near-zero transmission type sensor based on an aggregation effect and a detection method. The on-chip near-zero transmission type sensor comprises a power divider, a synthesizer, a split-ring resonator I, a split-ring resonator II and two branches, wherein the power divider is connected with the synthesizer through two branches; the split-ring resonator I and the split-ring resonator II are loaded on the two sides of the two branches respectively, and the two split-ring resonators are connected with the two branches in a coupling mode; an interdigital capacitor is loaded in a resonant ring in the split-ring resonator II, and a microfluidic channel is arranged on the interdigital capacitor; an interdigital capacitor is loaded in a resonant ring of the split resonant ring I; and an adjustable capacitor is connected in parallel in the resonant ring of the split-ring resonator I. The sensor provided by the invention can be applied to the fields of cytology, electromagnetic field |
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