Method for measuring single-side polishing rate in silicon carbide double-side polishing

The invention belongs to the technical field of semiconductor material processing, and discloses a method for measuring the single-side polishing rate in silicon carbide double-side polishing. The method specifically comprises the steps of carrying out edge chamfering treatment on the carbon side and the silicon side of a polished wafer to be measured; measuring the chamfered edges of the silicon side and the carbon side respectively to obtain the surface length and angle parameters of the silicon side and the carbon side, then respectively polishing the silicon side and the carbon side, recording the polishing duration, and measuring the surface length of the silicon side and the surface length of the carbon side again; calculating the thickness reduction amount of the silicon side and the thickness reduction amount of the carbon side; and calculating the polishing rate of the silicon side and the polishing rate of the carbon side through the thickness reduction amount. According to the method, the polishing