Solvent atmosphere controlled perovskite in-situ film forming method, product thereof, and application of product

The invention discloses a solvent atmosphere controlled perovskite in-situ film forming method. The method comprises the following steps: spin-coating a substrate with a perovskite precursor solution in an atmosphere with solvent gas partial pressure, and heating, annealing and crystallizing to obta...

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Hauptverfasser: QI YUHUI, JIN YIZHENG, LIU YANG, XIU YULING
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention discloses a solvent atmosphere controlled perovskite in-situ film forming method. The method comprises the following steps: spin-coating a substrate with a perovskite precursor solution in an atmosphere with solvent gas partial pressure, and heating, annealing and crystallizing to obtain a perovskite film. The solvent gas and a solvent in the perovskite precursor solution are the same substance. The invention also discloses a perovskite thin film prepared by the perovskite in-situ film forming method and an application of the perovskite thin film in preparation of a perovskite light-emitting diode. 本发明公开了一种溶剂氛围控制的钙钛矿原位成膜方法,包括:在具有溶剂气体分压的气氛下,将钙钛矿前驱体溶液旋涂到基底上,加热退火结晶得到钙钛矿薄膜;溶剂气体与钙钛矿前驱体溶液中的溶剂为同种物质。本发明还公开了所述钙钛矿原位成膜方法制备得到的钙钛矿薄膜及其在制备钙钛矿发光二极管中的应用。