LED chip epitaxial structure and preparation method thereof
The invention provides an LED chip epitaxial structure and a preparation method thereof. The LED chip epitaxial structure sequentially comprises a lattice buffer layer, a bottom buffer layer and an epitaxial layer from bottom to top, the lattice buffer layer, the bottom buffer layer and the epitaxia...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides an LED chip epitaxial structure and a preparation method thereof. The LED chip epitaxial structure sequentially comprises a lattice buffer layer, a bottom buffer layer and an epitaxial layer from bottom to top, the lattice buffer layer, the bottom buffer layer and the epitaxial layer are formed on a substrate, and the lattice buffer layer comprises at least two structural layers with different Al component contents; and the lattice constant of the lattice buffer layer is between the substrate and the bottom buffer layer. The lattice buffer layer is formed between the substrate and the bottom buffer layer, the problems of thermal mismatch and lattice mismatch existing between the substrate and the epitaxial structure can be solved through the lattice buffer layer, impurities in the substrate can be prevented from entering the epitaxial structure, and the high-quality epitaxial structure is obtained.
本发明提供了一种LED芯片外延结构及其制备方法,其中,所述LED芯片外延结构从下至上依次包括:形成于衬底上的晶格缓冲层、底部缓冲层以及外延层,所述晶格缓冲层包括至少两层Al组分含 |
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