Silicon carbide diode and manufacturing method

The invention provides a silicon carbide diode and a manufacturing method. The silicon carbide diode comprises a wafer substrate layer, a wafer epitaxial layer, doped regions, doped polycrystalline silicon, a first metal layer, a front metal layer, a front protective layer and back metal. One side o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN JUNFENG, CHEN BENCHANG, LIAO QIBO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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