Silicon carbide diode and manufacturing method

The invention provides a silicon carbide diode and a manufacturing method. The silicon carbide diode comprises a wafer substrate layer, a wafer epitaxial layer, doped regions, doped polycrystalline silicon, a first metal layer, a front metal layer, a front protective layer and back metal. One side of the wafer substrate layer is adjacent to one side of the wafer epitaxial layer; the back metal is arranged on the other side of the wafer substrate layer, and the wafer back ohmic contact is arranged between the back metal and the wafer substrate layer; a plurality of grooves are formed in the other side of the wafer epitaxial layer, doped regions are arranged at the bottoms of the grooves, and doped polycrystalline silicon is arranged on the plane where the tops of the grooves are located and the side surfaces of the grooves; and a first metal layer is arranged outside the doped regions and the doped polycrystalline silicon, a front metal layer is arranged outside the first metal layer, and the front protective