Straight waveguide structure for generating ultra-wideband two-photon state
The invention discloses a straight waveguide structure for generating an ultra-wideband two-photon state. The straight waveguide structure comprises a substrate layer, a LiNbO3 crystal thin film layer is arranged on the substrate layer, and 3%-10% of MgO is doped in the LiNbO3 crystal thin film laye...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a straight waveguide structure for generating an ultra-wideband two-photon state. The straight waveguide structure comprises a substrate layer, a LiNbO3 crystal thin film layer is arranged on the substrate layer, and 3%-10% of MgO is doped in the LiNbO3 crystal thin film layer; the length L of the substrate ranges from 6.5 mm to 10 mm, and the height D of the substrate ranges from 1.8 micrometers to 2.2 micrometers; and the upper surface of the substrate layer is provided with a LiNbO3 crystal thin film layer with a thick bottom d2 of 180-220 nm, the middle part of the LiNbO3 crystal thin film layer is provided with a LiNbO3 crystal thin film layer bulge, the cross section of the LiNbO3 crystal thin film layer bulge is an isosceles trapezoid, the height d1 of the isosceles trapezoid is 380-420 nm, the length W of the upper bottom is 1500-1700 nm, and the included angle theta between the waist and the lower bottom is 65-80 degrees. The cross section of the nonlinear straight waveguide p |
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