Semiconductor device

A semiconductor device includes an interconnect structure embedded in a first metallization layer, the first metallization layer including a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in a first metallization layer. The first liner structure extends along one or more boundaries of the interconnect structure in the first metallization layer. The first liner structure includes a second metal material that reacts with the one or more dopants, the second metal material being different from the first metal material. 半导体装置，包含嵌在第一金属化层中的互连结构，第一金属化层包含介电材料。互连结构包含第一金属材料。半导体装置包含嵌在第一金属化层中的第一衬垫结构。第一衬垫结构沿着第一金属化层中的互连结构的一或多个边界延伸。第一衬垫结构包含与一或多种掺质反应的第二金属材料，第二金属材料不同于第一金属材料。