Spraying structure of MOCVD (metal-organic chemical vapor deposition) equipment

A spraying structure of MOCVD (metal-organic chemical vapor deposition) equipment comprises a reaction chamber, an upper gas inlet spraying head, a lower gas inlet spraying head and a rotatable objective table. A mixed gas inlet is formed in the middle of a top plate of the reaction chamber. The upp...

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Bibliographische Detailangaben
Hauptverfasser:	WAN YI, LIANG SHUAI, CHEN ZHILI, DU GUANGYU, NI YANSONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A spraying structure of MOCVD (metal-organic chemical vapor deposition) equipment comprises a reaction chamber, an upper gas inlet spraying head, a lower gas inlet spraying head and a rotatable objective table. A mixed gas inlet is formed in the middle of a top plate of the reaction chamber. The upper gas inlet spraying head is arranged inside the reaction chamber and is located below the mixed gas inlet. The lower gas inlet spraying head is arranged inside the reaction chamber and is located below the upper gas inlet spraying head. The rotatable objective table is arranged inside the reaction chamber and is located below the lower gas inlet spraying head. A mixed gas primary mixing cavity is formed between the upper gas inlet spraying head and the top plate of the reaction chamber. A mixed gas fine mixing cavity is formed between the lower gas inlet spraying head and the upper gas inlet spraying head. A reaction cavity is formed in the inner space, located below the lower gas inlet spraying head, of the reac