Emission probe and method for plasma diagnosis

The invention provides an emission probe and a method for plasma diagnosis, and belongs to the technical field of plasma diagnosis. An electron emission part is arranged at one end of the bracket; a bias voltage loading part is arranged outside the bracket, and the bias voltage loading part is posit...

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Hauptverfasser: XING ZANYANG, LI YANHUI, GUO XIN, LI JIANQUAN, ZHANG QINGHE, XIE XINYAO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides an emission probe and a method for plasma diagnosis, and belongs to the technical field of plasma diagnosis. An electron emission part is arranged at one end of the bracket; a bias voltage loading part is arranged outside the bracket, and the bias voltage loading part is positioned at one end close to the electron emission part; when the emission probe is used for plasma diagnosis, one end of the electron emission part and the bias voltage loading part are both connected with an external bias voltage loading circuit. The plasma space potential is directly given by the inflection point potential of the volt-ampere characteristic curve when the emission probe is at the zero emission limit. According to the method, the measurement process is simple, the influence of electron emission current on a characteristic curve is avoided, the disturbance influence of the filament temperature of the emission probe on plasma is reduced, and the service life of the emission probe is prolonged. Besides,