Composite single crystal piezoelectric substrate and preparation method thereof
The invention discloses a composite single-crystal piezoelectric substrate and a preparation method thereof. The composite single-crystal piezoelectric substrate comprises a silicon substrate layer (1), a silicon dioxide layer (2) and a single-crystal piezoelectric layer (3), wherein the surface of...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | ZHANG TAO LI ZHENYU ZHU HOUBIN ZHANG XIUQUAN WANG JINCUI |
description | The invention discloses a composite single-crystal piezoelectric substrate and a preparation method thereof. The composite single-crystal piezoelectric substrate comprises a silicon substrate layer (1), a silicon dioxide layer (2) and a single-crystal piezoelectric layer (3), wherein the surface of the silicon substrate layer (1) is damaged to form a damaged layer (4), and the damaged layer (4) is in contact with the silicon dioxide layer (2). According to the method provided by the invention, a high-temperature process step is set before the damaged layer (4) is formed, and the damaged layer (4) is prepared through the silicon dioxide layer (2) in a remote distance manner, so the thickness uniformity of the silicon dioxide layer (2) is good, the defect density for capturing carriers in the damaged layer (4) is large, the structure of the composite single crystal piezoelectric substrate is stable, carriers generated due to inevitable defects on the interface of the silicon substrate layer (1) and the silicon |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN113541626A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN113541626A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN113541626A3</originalsourceid><addsrcrecordid>eNqNyjEOwjAQBVE3FAi4w3IAChNIH0UgKmjoI-P8EEuO1_IuBZyeFByAajTSW5pby1NmCQqSkJ4R5Mtb1EXKAR9GhNcSPMnrIVrczFzqKRdkN1_gRBN05J50RAEPa7MYXBRsfl2Z7fl0by87ZO4g2XkkaNdera2OB1vv66b6x3wB5d03_A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Composite single crystal piezoelectric substrate and preparation method thereof</title><source>esp@cenet</source><creator>ZHANG TAO ; LI ZHENYU ; ZHU HOUBIN ; ZHANG XIUQUAN ; WANG JINCUI</creator><creatorcontrib>ZHANG TAO ; LI ZHENYU ; ZHU HOUBIN ; ZHANG XIUQUAN ; WANG JINCUI</creatorcontrib><description>The invention discloses a composite single-crystal piezoelectric substrate and a preparation method thereof. The composite single-crystal piezoelectric substrate comprises a silicon substrate layer (1), a silicon dioxide layer (2) and a single-crystal piezoelectric layer (3), wherein the surface of the silicon substrate layer (1) is damaged to form a damaged layer (4), and the damaged layer (4) is in contact with the silicon dioxide layer (2). According to the method provided by the invention, a high-temperature process step is set before the damaged layer (4) is formed, and the damaged layer (4) is prepared through the silicon dioxide layer (2) in a remote distance manner, so the thickness uniformity of the silicon dioxide layer (2) is good, the defect density for capturing carriers in the damaged layer (4) is large, the structure of the composite single crystal piezoelectric substrate is stable, carriers generated due to inevitable defects on the interface of the silicon substrate layer (1) and the silicon</description><language>chi ; eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211022&DB=EPODOC&CC=CN&NR=113541626A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211022&DB=EPODOC&CC=CN&NR=113541626A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHANG TAO</creatorcontrib><creatorcontrib>LI ZHENYU</creatorcontrib><creatorcontrib>ZHU HOUBIN</creatorcontrib><creatorcontrib>ZHANG XIUQUAN</creatorcontrib><creatorcontrib>WANG JINCUI</creatorcontrib><title>Composite single crystal piezoelectric substrate and preparation method thereof</title><description>The invention discloses a composite single-crystal piezoelectric substrate and a preparation method thereof. The composite single-crystal piezoelectric substrate comprises a silicon substrate layer (1), a silicon dioxide layer (2) and a single-crystal piezoelectric layer (3), wherein the surface of the silicon substrate layer (1) is damaged to form a damaged layer (4), and the damaged layer (4) is in contact with the silicon dioxide layer (2). According to the method provided by the invention, a high-temperature process step is set before the damaged layer (4) is formed, and the damaged layer (4) is prepared through the silicon dioxide layer (2) in a remote distance manner, so the thickness uniformity of the silicon dioxide layer (2) is good, the defect density for capturing carriers in the damaged layer (4) is large, the structure of the composite single crystal piezoelectric substrate is stable, carriers generated due to inevitable defects on the interface of the silicon substrate layer (1) and the silicon</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEOwjAQBVE3FAi4w3IAChNIH0UgKmjoI-P8EEuO1_IuBZyeFByAajTSW5pby1NmCQqSkJ4R5Mtb1EXKAR9GhNcSPMnrIVrczFzqKRdkN1_gRBN05J50RAEPa7MYXBRsfl2Z7fl0by87ZO4g2XkkaNdera2OB1vv66b6x3wB5d03_A</recordid><startdate>20211022</startdate><enddate>20211022</enddate><creator>ZHANG TAO</creator><creator>LI ZHENYU</creator><creator>ZHU HOUBIN</creator><creator>ZHANG XIUQUAN</creator><creator>WANG JINCUI</creator><scope>EVB</scope></search><sort><creationdate>20211022</creationdate><title>Composite single crystal piezoelectric substrate and preparation method thereof</title><author>ZHANG TAO ; LI ZHENYU ; ZHU HOUBIN ; ZHANG XIUQUAN ; WANG JINCUI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113541626A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHANG TAO</creatorcontrib><creatorcontrib>LI ZHENYU</creatorcontrib><creatorcontrib>ZHU HOUBIN</creatorcontrib><creatorcontrib>ZHANG XIUQUAN</creatorcontrib><creatorcontrib>WANG JINCUI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHANG TAO</au><au>LI ZHENYU</au><au>ZHU HOUBIN</au><au>ZHANG XIUQUAN</au><au>WANG JINCUI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Composite single crystal piezoelectric substrate and preparation method thereof</title><date>2021-10-22</date><risdate>2021</risdate><abstract>The invention discloses a composite single-crystal piezoelectric substrate and a preparation method thereof. The composite single-crystal piezoelectric substrate comprises a silicon substrate layer (1), a silicon dioxide layer (2) and a single-crystal piezoelectric layer (3), wherein the surface of the silicon substrate layer (1) is damaged to form a damaged layer (4), and the damaged layer (4) is in contact with the silicon dioxide layer (2). According to the method provided by the invention, a high-temperature process step is set before the damaged layer (4) is formed, and the damaged layer (4) is prepared through the silicon dioxide layer (2) in a remote distance manner, so the thickness uniformity of the silicon dioxide layer (2) is good, the defect density for capturing carriers in the damaged layer (4) is large, the structure of the composite single crystal piezoelectric substrate is stable, carriers generated due to inevitable defects on the interface of the silicon substrate layer (1) and the silicon</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | chi ; eng |
recordid | cdi_epo_espacenet_CN113541626A |
source | esp@cenet |
subjects | BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS |
title | Composite single crystal piezoelectric substrate and preparation method thereof |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-20T10%3A44%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHANG%20TAO&rft.date=2021-10-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN113541626A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |