Method for manufacturing semiconductor device

The embodiment of the invention provides a method for manufacturing a semiconductor device. The method includes forming a fin structure having a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked; forming a sacrificial gate structure over the fin structure; and etching a source/drain (S/D) region, thereby forming an opening exposing at least one second semiconductor layer. The method also includes implanting an etch rate modifying species into at least one second semiconductor layer through the opening, thereby forming an implanted portion of the at least one second semiconductor layer. The method further includes selectively etching an implanted portion of the at least one second semiconductor layer; etching back the end part of the first semiconductor layer exposed in the opening; and forming a source/drain (S/D) epitaxial layer in the opening. 本发明实施例提供半导体装置的制造方法。上述方法包含形成具有交互堆叠的多个第一半导体层与多个第二半导体层的鳍片结构；形成牺牲栅极结构于鳍片结构上方；以及蚀刻源极/漏极(S/D)区，从而形成暴露出至少一个第二半导体层的开口