Semiconductor plate groove etching method

The invention discloses a semiconductor plate groove etching method, which relates to the technical field of semiconductor processing, and comprises the following steps of: 1, covering photoresist on the surface of a non-etching area to obtain a processing plate; step 2, installing the processing pl...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JIANG ZHENRONG, ZHOU HAISHENG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a semiconductor plate groove etching method, which relates to the technical field of semiconductor processing, and comprises the following steps of: 1, covering photoresist on the surface of a non-etching area to obtain a processing plate; step 2, installing the processing plate on a plate chuck in an etching device, and descending the processing plate into an etching groove for etching; step 3, obtaining an etched plate is obtained after etching, and moving the etched plate into a cleaning tank for cleaning; and 4, after cleaning, obtaining a finished plate, cleaning the surface of the finished plate, and drying the finished plate. According to the method, the groove of the semiconductor plate is processed through the etching process, the processing quality of the groove of the plate can be improved, the non-etching region of the plate is connected with the photoresist through an adhesive, so that the bonding quality of the photoresist and the plate can be improved, relatively thin ph