Improved lithographic method

The invention discloses an improved photoetching method. The method comprises the following steps: providing a photomask plate; measuring a placement error of a photoetching mark on the photomask plate; and executing a calibration process of the photoetching process according to the placement error. According to the method and the device, the placement error of the photoetching mark on the photomask plate is measured, and the placement error is applied to the calibration process in the subsequent photoetching process flow using the photomask plate, so that the calibration accuracy in the photoetching process flow is improved. And a calibration process of the photoetching process is executed. 本申请公开了一种改进的光刻方法，所述方法包括：提供一光掩模板；测量所述光掩模板上光刻标记的放置误差；根据所述放置误差执行光刻工艺的校准流程。本申请通过测量光刻标记在光掩模板上的放置误差，并将放置误差应用到后续使用光掩模板的光刻工艺流程中的校准流程，以提高光刻工艺流程中的校准准确性。执行光刻工艺的校准流程。