Capacitor structure and manufacturing method thereof

The invention relates to a capacitor and a manufacturing method thereof. Compared with a capacitor obtained by an existing manufacturing method, the method has the advantages that wet etching for removing the sacrificial die layer in a conventional process is replaced by a dry stripping process, the...

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Bibliographische Detailangaben
Hauptverfasser: JIN YIQIU, LI JUNFENG, WANG WENWU, ZHOU NA, YANG TAO, LI JUNJIE
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to a capacitor and a manufacturing method thereof. Compared with a capacitor obtained by an existing manufacturing method, the method has the advantages that wet etching for removing the sacrificial die layer in a conventional process is replaced by a dry stripping process, then the wet cleaning process is performed, and through the whole-process dry process, the problem of inclination and even collapse of the bottom electrode caused by surface tension and the like generated by a wet process can be effectively solved. 本申请涉及一种电容器及其制备方法。与现有制造方法得到的电容器相比,本申请通过将常规工艺中采用湿法刻蚀去除牺牲模层替换为干法剥离工艺,并随后进行湿法清洗工艺,通过全制程的干法工艺,从而能够有效解决因为湿法工艺所产生的表面张力等而导致的底电极的倾斜甚至是塌陷的问题。