Preparation method of nitride near-infrared light-emitting diode

The invention discloses a preparation method of a nitride near-infrared light-emitting diode. The preparation method comprises the following steps of: 1, preparing an epitaxial structure layer on a sapphire substrate, the epitaxial structure layer sequentially comprising a GaN nucleating layer, a GaN template layer, a DBR reflecting layer, a p-type InGaN hole injection layer and an n-InN light emitting layer; 2, etching a part of the n-InN light-emitting layer on the surface of the epitaxial structure layer to obtain a plurality of electrode deposition regions, the p-type InGaN hole injection layer corresponding to the electrode deposition regions being exposed; 3, depositing a first metal electrode in the electrode deposition regions and annealing to form a p-type region electrode; 4, depositing a second metal electrode on the n-InN light-emitting layer and annealing to obtain a primary device; and 5, cleaving and packaging the primary device to obtain a discrete light emitting diode device. 本发明公开了一种氮化物近红外发光