Method for manufacturing semiconductor element

The invention discloses a method for manufacturing a semiconductor element, which mainly comprises the following steps of providing a substrate comprising an NMOS region and a PMOS region, forming a first gate structure on the NMOS region and a second gate structure on the PMOS region, forming a covering layer on the first gate structure and the second gate structure, forming a first lightly doped drain beside the first gate structure, forming a second lightly doped drain beside the second gate structure, and then performing a long temperature annealing (soak anneal) process to increase the oxygen concentration of the covering layer to a saturation value. 本发明公开一种制作半导体元件的方法，其主要先提供一基底包含NMOS区及PMOS区，然后形成第一栅极结构于NMOS区以及第二栅极结构于PMOS区，形成一遮盖层于第一栅极结构以及第二栅极结构上，形成第一轻掺杂漏极于第一栅极结构旁，形成第二轻掺杂漏极于第二栅极结构旁，再进行一长温退火(soak anneal)制作工艺将遮盖层的氧浓度提升至一饱和值。