SEMICONDUCTOR STORAGE DEVICE

A semiconductor storage device includes a first stacked body including a plurality of first insulating layers and a plurality of first gate electrode layers that are alternately stacked in a first direction; a first semiconductor layer that extends in the first stacked body in the first direction; a first charge storage layer provided between the first semiconductor layer and the first gate electrode layers; a second stacked body including a plurality of second insulating layers and a plurality of second gate electrode layers that are alternately stacked in a first direction; a second semiconductor layer extending in the second stacked body in the first direction; a second charge storage layer between the second semiconductor layer and the second charge storage layer; a conductive layer provided between the first stacked body and the second stacked body and extending in the first direction and a second direction perpendicular to the first direction; and a first silicon oxide layer provided between the conduct