SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The embodiment provides a semiconductor device and a manufacturing method thereof capable of suppressing problems caused by the shape of a memory hole. In one embodiment, the semiconductor device includes a stacked film alternately including a plurality of electrode layers and a plurality of insulating layers. The device further includes a first insulator, a charge storage layer, a second insulator and a first semiconductor layer that are disposed in order in the stacked film. The device further includes a plurality of first films disposed between the first insulator and the plurality of insulating layers. Furthermore, at least one of the first films includes a second semiconductor layer. 实施方式提供一种能够抑制由存储器孔的形状引起的问题的半导体装置及其制造方法。实施方式的半导体装置具备积层膜，所述积层膜交替地包含多个电极层和多个绝缘层。所述装置还具备第1绝缘膜、电荷储存层、第2绝缘膜及第1半导体层，它们依序设置在所述积层膜内。所述装置还具备多个第1膜，所述多个第1膜设置于所述第1绝缘膜与所述多个绝缘层之间。并且，所述多个第1膜中的至少任一个包含第2半导体层。