Memory device and forming method thereof

A memory device is disclosed. The memory device includes a first program line and a second program line. A first portion of the first program line is formed in the first conductive layer, and a second portion of the first program line is formed in the second conductive layer over the first conductive layer. A first portion of the second program line is formed in the first conductive layer, and a second portion of the second program line is formed in the third conductive layer over the second conductive layer. A width of at least one of the second portion of the first program line or the second portion of the second program line is different from a width of at least one of the first portion of the first program line or the first portion of the second program line. A method of forming a memory device is also disclosed herein. 公开了一种存储器件。存储器件包括第一程序线和第二程序线。第一程序线的第一部分形成在第一导电层中，并且第一程序线的第二部分形成在第一导电层上方的第二导电层中。第二程序线的第一部分形成在第一导电层中，并且第二程序线的第二部分形成在第二导电层上方的第三导电层中。第一程序线的第二部分或第二程序线的第二部分中的至少一者的宽度不同于第一程序线的第一部分或第二程序线的第一部分中的至少一者