Memory device

A memory device includes a first program line and a second program line. A first portion of the first program line is formed in the first conductive layer, and a second portion of the first program line is formed in the second conductive layer over the first conductive layer. A first portion of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NIAN YIXIN, LIN ZHIYU, ZHAO WEICHENG, FUJIWARA HIDEHIRO, CHEN YANHUI, WANG RUYU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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