Broadband high-linearity low-noise amplifier circuit based on CMOS structure

The invention discloses a broadband high-linearity low-noise amplifier circuit based on a CMOS structure. The circuit is characterized by comprising a three-stage cascade structure composed of an input stage, a middle stage and an output stage, and the input stage is of a two-stage cascade common-ga...

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Bibliographische Detailangaben
Hauptverfasser: CHEN ZIRAN, ZHANG MENG, HU YANSHENG, LI SHUOXING
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a broadband high-linearity low-noise amplifier circuit based on a CMOS structure. The circuit is characterized by comprising a three-stage cascade structure composed of an input stage, a middle stage and an output stage, and the input stage is of a two-stage cascade common-gate structure and used for achieving radio frequency broadband matching and low-noise amplification functions; the middle stage adopts a distributed common-source amplifier structure and is used for realizing broadband extension and signal amplification of signals, and the output stage adopts a power amplifier design structure and is used for realizing output matching and power driving functions of radio-frequency signals. According to the broadband high-linearity low-noise amplifier, broadband high-linearity work within the broadband frequency range of 500 MHz to 2.5 GHz is achieved, the performance is good, the broadband high-linearity low-noise amplifier based on the CMOS structure is achieved, and monolithic int