Pixel circuit of optical sensor and manufacturing method thereof

The invention relates to a pixel circuit of a light sensor and a manufacturing method thereof. A method for manufacturing a pixel circuit includes: depositing an insulating layer on an exposed face of an interconnect structure of an integrated circuit, the interconnect structure having a conductive element flush with the exposed face; etching an opening through the insulating layer to the conductive element; depositing an electrode layer on and in contact with the conductive element and the insulating layer; defining an electrode by removing (by etching) a portion of the electrode layer on the insulating layer; and depositing a film configured to convert photons into electron-hole pairs when rays at the operating wavelength of the pixel circuit reach the pixel circuit. 本公开涉及一种光传感器的像素电路及其制造方法。用于制造像素电路的方法包括：在集成电路的互连结构的暴露面上沉积绝缘层，该互连结构具有与所述暴露面齐平的导电元件；以及蚀刻穿过绝缘层到达导电元件的开口；将电极层沉积在导电元件和绝缘层上并且与导电元件和绝缘层接触；通过去除(通过蚀刻)位于绝缘层上的电极层的一部分来限定电极；以及沉积膜，该膜被配置为当在像素电路的工作波长处的射线到达像素电路时，将光子转换成电子-空穴对。