package structure and method for forming the same

An exemplary structure includes a first semiconductor device bonded to a first side of the first redistribution structure through a first conductive connection; the first semiconductor device comprising a first plurality of passive elements formed on the first substrate, the first redistribution str...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZHOU MENGWEI, CHEN SHUOMAO, WENG DEQI, ZHUANG BOYAO, ZHENG XINPU
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ZHOU MENGWEI
CHEN SHUOMAO
WENG DEQI
ZHUANG BOYAO
ZHENG XINPU
description An exemplary structure includes a first semiconductor device bonded to a first side of the first redistribution structure through a first conductive connection; the first semiconductor device comprising a first plurality of passive elements formed on the first substrate, the first redistribution structure comprising a plurality of dielectric layers having a metallization pattern therein, the metallization pattern of the first redistribution structure being electrically coupled to the first plurality of passive elements.; a second semiconductor device bonded to the second side of the first redistribution structure by a second conductive connection, the second side of the first redistribution structure opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on the second substrate, the metallization pattern of the first redistribution structure being electrically coupled to the second plurality of passive elements. T
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN113471176A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN113471176A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN113471176A3</originalsourceid><addsrcrecordid>eNrjZDAsSEzOTkxPVSguKSpNLiktSlVIzEtRyE0tychPUUjLLwLh3My8dIWSDKCixNxUHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWgw0LzUvtSTe2c_Q0NjE3NDQ3MzRmBg1AIztK4c</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>package structure and method for forming the same</title><source>esp@cenet</source><creator>ZHOU MENGWEI ; CHEN SHUOMAO ; WENG DEQI ; ZHUANG BOYAO ; ZHENG XINPU</creator><creatorcontrib>ZHOU MENGWEI ; CHEN SHUOMAO ; WENG DEQI ; ZHUANG BOYAO ; ZHENG XINPU</creatorcontrib><description>An exemplary structure includes a first semiconductor device bonded to a first side of the first redistribution structure through a first conductive connection; the first semiconductor device comprising a first plurality of passive elements formed on the first substrate, the first redistribution structure comprising a plurality of dielectric layers having a metallization pattern therein, the metallization pattern of the first redistribution structure being electrically coupled to the first plurality of passive elements.; a second semiconductor device bonded to the second side of the first redistribution structure by a second conductive connection, the second side of the first redistribution structure opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on the second substrate, the metallization pattern of the first redistribution structure being electrically coupled to the second plurality of passive elements. T</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211001&amp;DB=EPODOC&amp;CC=CN&amp;NR=113471176A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211001&amp;DB=EPODOC&amp;CC=CN&amp;NR=113471176A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHOU MENGWEI</creatorcontrib><creatorcontrib>CHEN SHUOMAO</creatorcontrib><creatorcontrib>WENG DEQI</creatorcontrib><creatorcontrib>ZHUANG BOYAO</creatorcontrib><creatorcontrib>ZHENG XINPU</creatorcontrib><title>package structure and method for forming the same</title><description>An exemplary structure includes a first semiconductor device bonded to a first side of the first redistribution structure through a first conductive connection; the first semiconductor device comprising a first plurality of passive elements formed on the first substrate, the first redistribution structure comprising a plurality of dielectric layers having a metallization pattern therein, the metallization pattern of the first redistribution structure being electrically coupled to the first plurality of passive elements.; a second semiconductor device bonded to the second side of the first redistribution structure by a second conductive connection, the second side of the first redistribution structure opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on the second substrate, the metallization pattern of the first redistribution structure being electrically coupled to the second plurality of passive elements. T</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAsSEzOTkxPVSguKSpNLiktSlVIzEtRyE0tychPUUjLLwLh3My8dIWSDKCixNxUHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWgw0LzUvtSTe2c_Q0NjE3NDQ3MzRmBg1AIztK4c</recordid><startdate>20211001</startdate><enddate>20211001</enddate><creator>ZHOU MENGWEI</creator><creator>CHEN SHUOMAO</creator><creator>WENG DEQI</creator><creator>ZHUANG BOYAO</creator><creator>ZHENG XINPU</creator><scope>EVB</scope></search><sort><creationdate>20211001</creationdate><title>package structure and method for forming the same</title><author>ZHOU MENGWEI ; CHEN SHUOMAO ; WENG DEQI ; ZHUANG BOYAO ; ZHENG XINPU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113471176A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHOU MENGWEI</creatorcontrib><creatorcontrib>CHEN SHUOMAO</creatorcontrib><creatorcontrib>WENG DEQI</creatorcontrib><creatorcontrib>ZHUANG BOYAO</creatorcontrib><creatorcontrib>ZHENG XINPU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHOU MENGWEI</au><au>CHEN SHUOMAO</au><au>WENG DEQI</au><au>ZHUANG BOYAO</au><au>ZHENG XINPU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>package structure and method for forming the same</title><date>2021-10-01</date><risdate>2021</risdate><abstract>An exemplary structure includes a first semiconductor device bonded to a first side of the first redistribution structure through a first conductive connection; the first semiconductor device comprising a first plurality of passive elements formed on the first substrate, the first redistribution structure comprising a plurality of dielectric layers having a metallization pattern therein, the metallization pattern of the first redistribution structure being electrically coupled to the first plurality of passive elements.; a second semiconductor device bonded to the second side of the first redistribution structure by a second conductive connection, the second side of the first redistribution structure opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on the second substrate, the metallization pattern of the first redistribution structure being electrically coupled to the second plurality of passive elements. T</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN113471176A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title package structure and method for forming the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T14%3A26%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHOU%20MENGWEI&rft.date=2021-10-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN113471176A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true