package structure and method for forming the same

An exemplary structure includes a first semiconductor device bonded to a first side of the first redistribution structure through a first conductive connection; the first semiconductor device comprising a first plurality of passive elements formed on the first substrate, the first redistribution str...

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Bibliographische Detailangaben
Hauptverfasser: ZHOU MENGWEI, CHEN SHUOMAO, WENG DEQI, ZHUANG BOYAO, ZHENG XINPU
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:An exemplary structure includes a first semiconductor device bonded to a first side of the first redistribution structure through a first conductive connection; the first semiconductor device comprising a first plurality of passive elements formed on the first substrate, the first redistribution structure comprising a plurality of dielectric layers having a metallization pattern therein, the metallization pattern of the first redistribution structure being electrically coupled to the first plurality of passive elements.; a second semiconductor device bonded to the second side of the first redistribution structure by a second conductive connection, the second side of the first redistribution structure opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on the second substrate, the metallization pattern of the first redistribution structure being electrically coupled to the second plurality of passive elements. T