Epitaxial growth apparatus

The invention provides an epitaxial growth device. The epitaxial growth device is characterized in that the epitaxial growth device comprises a reaction chamber and a vacuum lock, the reaction chamber is provided with a plurality of heaters arranged into a circle, the reaction chamber is provided with a gas inlet passage and a gas outlet passage, the reaction chamber is further provided with a separation device capable of spraying gas to shield each heater, and the reaction chamber is also provided with a wafer loading and unloading device for loading and unloading a wafer on the heater; and the vacuum lock is provided with a wafer box used for conveying wafers. According to the invention, the productivity flux of the epitaxial process is improved. 本发明提供了外延生长装置，其特征在于包括反应腔室和真空锁，反应腔室具有若干个加热器排列成圆圈，反应腔室具有进气和排气通路，反应腔室还设有分隔装置能够喷出气体来屏蔽每个加热器，反应腔室还设有晶圆装卸器装卸加热器上的晶圆；真空锁中具有晶圆匣用于运送晶圆。本发明提高了外延工艺的产能通量。